Publications 1980-2003

[83]

Unifit 2002 - universal analysis software for photoelectron spectra R. Hesse, T. Chassé, R. Szargan c) (2003) 856-863.

[82]

Mo-Si interface formation by ion beam sputter deposition A. Köhler, J.W. Gerlach, T. Chassé, H. Neumann, W. Frank, G. Wagner, B. Rauschenbach Mat. Res. Soc. Proc. Vol. 749 (2003) W17.12.1-6.

[81]

Ion beam assisted deposition of multilayer X-ray mirrors for the extreme ultraviolet lithography T. Chassé, H. Neumann, B. Rauschenbach Nuclear Instruments and Methods in Physics Research B 206 (2003) 377-381.

[80]

Thickness-dependence of photoemission and X-ray fluorescence spectra in epitaxial NiO layers on Ag(100) S.A. Krasnikov, A.B. Preobrajenski, T. Chassé, R. Szargan Thin Solid Films 428 (2003) 201-205.

[79]

Influence of preparation parameters for low-energy ion beam nitridation of III-V semiconductor surfaces J.-D. Hecht, F. Frost, A. Sidorenko, D. Hirsch, H. Neumann, A. Schindler, S. Krasnikov, L. Zhang, T. Chassé Solid State Electronics 47 (2003) 413-418.

[78]

Mo/Si-Multilayers for EUV-Lithography by Ion Beam Deposition T. Chassé, H. Neumann, B. Ocker, M. Scherer, W. Frank, F. Frost, D. Hirsch, A. Schindler, G. Wagner, M. Lorenz, G. Otto, M. Zeuner, B. Rauschenbach Vacuum 71 (2003) 407-415.

[77]

GaAs surface cleaning by low-energy hydrogen ion beam treatment N. Razek, K. Otte, T. Chassé, D. Hirsch, A. Schindler, B. Rauschenbach J. Vacuum Sci. Technol. A 20 (2002) 1492-1497.

[76]

Molecular effects in solid NaNO₃ observed by X-ray Absorption and Resonant Auger Spectroscopy A.B. Preobrajenski, A.S. Vinogradov, S.L. Molodtsov, S.K. Krasnikov, T. Chassé, R. Szargan, C. Laubschat Phys. Rev. B 65 (2002) 205116/1-10.

[75]

Scanning Tunneling Microscopy and Spectroscopy of UHV-Deposited Dodecanthiolate Films on InP(110) surfaces at Consecutive Doses: A Single Domain System D. Zerulla, T. Chassé Langmuir 18 (2002) 5392-5399.

[74]

Chemical defect explanation for the effect of postdeposition treatments on CuInS₂ K. Otte, T. Chassé, G. Lippold, B. Rauschenbach, R. Szargan J. Appl. Phys. 91 (2002) 1624-1627.

[73]

X-ray absorption near edge structure investigation of group III nitrides and nitrided AIII-BV semiconductor surfaces - FEFF-calculations and Electron Yield Measurements T. Chassé, K.H. Hallmeier, J.-D. Hecht, F. Frost Surface Reviews and Letters 9 (2002) 381-386.

[72]

X-ray absorption evidence for the back-donation in iron cyanide complexes A.S. Vinogradov, A.B. Preobrajenski, S.A. Krasnikov, A. Knop-Gericke, P. Bressler, T. Chassé, R. Szargan, R. Schlögl Surface Reviews and Letters 9 (2002) 359-364.

[71]

Electronic and crystalline structure at the surface of epitaxial films of DyNi grown on W(110) W. Schneider, S.L. Molodtsov, J. Boysen, J.J. Hinarejos, C. Laubschat, A.B. Preobrajenski, M. Richter, T. Chassé Phys. Rev. B 66 (2002) 245406/1-8.

[70]

A unique ECR broad beam source for thin film processing M. Zeuner, F. Scholze, H. Neumann, T. Chassé, G. Otto, D. Roth, A. Hellmich, B. Ocker Surface and Coatings Technology 142 (2001) 11-20.

[69]

Observation of interstitial nitrogen in the low-energy ion beam nitridation of AIII-BV semiconductor surfaces by means of X-ray absorption and X-ray photoelectron spectroscopy J.-D. Hecht, F. Frost, A.B. Preobrajenski, D. Hirsch, H. Neumann, A. Schindler, T. Chassé J. Appl. Phys. 90 (2001) 6066-6069.

[68]

Stability of sulfur-induced superstructures on InP(001) C. Engler, J. Dittmar, T. Chassé Surf. Sci. 495 (2001) 55-67.

[67]

Electronic Structure and Surface Reconstruction of DyNi Films Grown on W(110) S.L. Molodtsov, W. Schneider, A.B. Preobrajenski, J. Boysen, M. Richter, T. Chassé, C. Laubschat Surf. Sci. 482-485 (2001) 746-751.

[66]

Two types of sulfur-induced(2x1)reconstructions on InP(001) A.B. Preobrajenski, R.K. Gebhardt, I. Uhlig, T. Chassé Surf. Sci. 481 (2001) 1-12.

[65]

Conductivity-type conversion of p-type CuInSe₂ due to hydrogenation K. Otte, G. Lippold, D. Hirsch, R.K. Gebhardt, T. Chassé Appl. Surf. Sci. 179 (2001) 203-208.

[64]

In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy J.-D. Hecht, F. Frost, T. Chassé, D. Hirsch, H. Neumann, A. Schindler, F. Bigl Appl. Surf. Sci. 179 (2001) 196-202.

[63]

In situ XPS investigations of ion beam hydrogenation of CuInSe₂ K.Otte, G. Lippold, D. Hirsch, T. Chassé, A. Schindler, M.V.Yakushev, R.W. Martin, F. Bigl Thin Solid Films 387 (2001) 185-188.

[62]

Exploiting the difference in lattice structures for formation of self-assembled PbS dots on InP(110) A.B. Preobrajenski, K. Barucki, T. Chassé Phys. Rev. Lett. 85 (2000) 4337-4340.

[61]

Atomic and electronic structure of epitaxial PbS on InP(110) and InP(001) A.B. Preobrajenski, T. Chassé Appl. Surf. Sci. 166 (2000) 201-208.

[60]

Passivation of the Ge/InP(110) interface by As interlayers - Interface reaction and band offsets A.B. Preobrajenski, S. Schömann, R.K. Gebhardt, T. Chassé J. Vacuum Sci. Technol. B 18 (2000) 1973-1979.

[59]

Core and valence level photoemission study of the InP(001) -(2x1) s surface: Surface structure and electronic states R.K. Gebhardt, A.B. Preobrajenski, T. Chassé Phys. Rev. B 61 (2000) 9997-10000.

[58]

Angular resolved X-ray absorption near edge structure investigation of adsorbed alkanethiol monolayers on III-V(110) surfaces T. Chassé, D. Zerulla, K. Hallmeier Surface Reviews and Letters 6 (1999) 1179-1186.

[57]

Breakdown of the forward scattering model in MgO A. Chassé, L. Niebergall, P. Rennert, I. Uhlig, T. Chassé Surface Reviews and Letters 6 (1999) 1207-1214.

[56]

Peak Shape Analysis of Core Level Photoelectron Spectra using UNIFIT for WINDOWS R. Hesse, T. Chassé, R. Szargan Fresenius J. Analyt. Chem. 365 (1999) 48-54.

[55]

X-ray induced damage of self-assembled alkanethiols on gold and indium phosphide D. Zerulla, T. Chassé Langmuir 15 (1999) 5285-5294.

[54]

Angular resolved XANES-measurements of the polar and azimuthal orientation of alkanethiols on InP(110) D. Zerulla, D. Mayer, K. Hallmeier, T. Chassé Chem. Phys. Lett. 311 (1999) 8-12.

[53]

Photoemission study of the interface reaction between Ag and H₂S-treated InP(001) S. Sloboshanin, R.K. Gebhardt, J.A. Schäfer, T. Chassé Surf. Sci. 431 (1999) 252-259.

[52]

Epitaxial growth and interface structure of PbS on InP(110) A. Preobrajenski, T. Chassé Appl. Surf. Sci. 142 (1999) 394-399.

[51]

Arsenic interlayers at the Sn/InP(001) interface R.K. Gebhardt, S. Sloboshanin, J.A. Schäfer, T. Chassé Appl. Surf. Sci. 142 (1999) 94-98.

[50]

Band alignment at organic-inorganic semiconductor interfaces: a-NPD and CuPc on InP(110) T. Chassé, C.-I. Wu, I.G. Hill, A. Kahn J. Appl. Phys. 85 (1999) 6589-6592.

[49]

Quantumchemical ab initio investigation of the atomic and electronic structure of sulfur chemisorption on InP(001) J. Dittmar, C. Engler, T. Chassé Zeitschrift für Physikal. Chemie 209 (1999) 47-65.

[48]

High-temperature arsenic adsorption on InP(110) - Surface bonding and surface structure T. Chassé, A. Chassé, S. Schömann J. Electron Spectrosc. Relat. Phenom. 96 (1998) 1-9.

[47]

Ordering and surfactant effects at the arsenic-modified Pb/InP(110) interface S. Schömann, T. Chassé J. Vacuum Sci. Technol. A 16 (1998) 2990-2994.

[46]

Adsorbate analysis on modified sulfide surfaces D. Mayer, K.H. Hallmeier, T. Säring, T. Chassé, R. Szargan ECASIA'97, Proceedings of ECASIA-7, Göteborg Wiley & Sons, Chichester - I. Olefjord, L. Nyborg and D. Briggs (eds.) - ISBN 0471 978272 (1998) 353-356.

[45]

SXPS analysis of passivation and complexation on the CdS(1010) surface D. Mayer, K.H. Hallmeier, T. Chassé, R. Szargan Fresenius J. Analyt. Chem. 361 (1998) 689-692.

[44]

Competing interactions of different thiols on gold D. Zerulla, I. Uhlig, R. Szargan, T. Chassé Surf. Sci. 402-404 (1998) 604-608.

[43]

Investigation of the Sn/GaP(110) interface by core level photoemission:interface reaction, growth morphology and surface photovoltage effects T. Chassé, G. Neuhold, J.J. Paggel, K. Horn Appl. Surf. Sci. 115 (1997) 326-335.

[42]

Extended Fenske-Hall LCAO-MO calculations of the core level shifts in solid phosphorus compounds R. Franke, T. Chassé, J. Reinhold, P. Streubel, R. Szargan Chem. Phys. 220 (1997) 299-310.

[41]

Sulfur-modified surface of InP(001): Evidence for sulfur incorporation and surface oxidation T. Chassé, A. Chassé, H. Peisert, P. Streubel Appl. Phys. A 65 (1997) 543-549.

[40]

Influence of surface oxidation on the photoelectron diffraction intensities from InP single crystals V.I. Nefedov, I.S. Fedorova, R. Szargan, T. Chassé, H. Peisert J. Electron Spectrosc. Relat. Phenom. 87 (1997) 73-79.

[39]

Chemical stability of (NH₄)₂S-passivated InP(001) surfaces - Investigations by XPS and XPD H. Peisert, P.Streubel, T. Chassé, R. Szargan Fresenius J. Analyt. Chem. 358 (1997) 201-203.

[38]

Evidence of Mott-Hubbard and bipolaronic behaviour in photoemission spectra of alkali metal/GaAs(110) interfaces V.L. Alperovich, S.A. Ding, S.R. Barman, G. Neuhold, T. Chassé, K. Horn Proceedings of the 23rd Int. Conf. on the Physics of Semiconductors, Berlin World Scientific, Singapore - M. Scheffler, R. Zimmermann (eds.) - ISBN 9810227779 (1996) 923-926.

[37]

A new method of sulfurization of InP(001) surface with S₂Cl₂ studied by XPS and XAES H. Peisert, P. Streubel, T. Chassé, R. Szargan
ECASIA'95, Proceedings of ECASIA-6, Montreux Wiley & Sons, Chichester - H.J. Mathieu, B. Reihl, D. Briggs (eds.) - ISBN 0-471-95899-9 (1996) 319-322.

[36]

Observation of Cs-induced states in the band gap of GaP(110): Alkali metal bonding and Fermi level pinning G. Neuhold, T. Chassé, J.J. Paggel, K. Horn Phys. Rev. B 54 (1996) 8623-8626.

[35]

The influence of the amorphous overlayer on the photoelectron diffraction intensities of the single crystal (Russisch) V.I. Nefedov, I.S. Fedorova, H. Peisert, P. Streubel, T. Chassé, R. Szargan Doklady Akademii Nauk 348, 3 (1996) 339-342.

[34]

Electronic and surfactant effects of arsenic interlayers at the Ag/InP(110) interface S. Schömann, K. Schmidt, H. Peisert, T. Chassé, K. Horn Surf. Sci. 352-354 (1996) 855-860.

[33]

The influence of elastic scattering in overlayers on PED from PbS single crystals R. Szargan, I. Uhlig, T. Chassé, V.I. Nefedov, I.S. Fedorova, V.G. Yarzhemsky J. Electron Spectrosc. Relat. Phenom. 76 (1995) 709-714.

[32]

Chemical Bonding Studies on UV/Ozone- and (NH₄)₂S-treated InP(001) surfaces by X-ray Photoelectron Spectroscopy and X-ray Induced Auger Electron Spectroscopy P. Streubel, H. Peisert, R. Hesse, T. Chassé, R. Szargan Surf. Interface Anal. 23 (1995) 581-588.

[31]

Sulfurization of InP(001) surfaces studied by X-ray photoelectron and X-ray induced Auger electron spectroscopies (XPS/XAES) T. Chassé, H. Peisert, P.Streubel, R. Szargan Surf. Sci. 331-333 (1995) 434-440.

[30]

Investigation of the As/InP(110) interface by high resolution photoemission T. Chassé, G. Neuhold, J.J. Paggel, K. Horn Surf. Sci. 331-333 (1995) 511-516.

[29]

Evidence for surface derelaxation induced by alkali metals on the(110) surfaces of III-V compound semiconductors: Cs/InP(110) T. Chassé, G. Neuhold, J.J. Paggel, K. Horn Surf. Sci. 331-333 (1995) 528-33.

[28]

Photoemission study of the Cs/GaP(110) interface at low temperatures T. Chassé, J. Paggel, G. Neuhold, W. Theis, K. Horn Surf. Sci. 307-309 (1994) 295-302.

[27]

Relaxation energies in XPS and XAES of solid sulfur compounds H. Peisert, T. Chassé, P. Streubel, R. Szargan, A. Meisel J. Electron Spectrosc. Relat. Phenom. 68 (1994) 321-328.

[26]

Electrical properties of Rh/n-GaAs contacts: A comparison of different preparation methods M.H. Ludwig, E. Meyer, G. Heymann, T. Chassé Appl. Surf. Sci. 68 (1993) 445-451.

[25]

Growth Mode and Temperature Dependent Morphology of Indium on GaP(110) T. Chassé, M. Alonso, R. Cimino, W. Theis, W. Braun, K. Horn Appl. Surf. Sci. 64 (1993) 329-343.

[24]

XPS binding energies of deep core levels and the Auger-parameter - An application to solid sulfur compounds T. Chassé, H. Peisert, P. Streubel, R. Szargan, A. Meisel Acta Phys. Pol. A 83 (1993) 793-802.

[23]

XPS Core-Level Shifts of Phosphorus in Phosphates and Native Oxide Layers on InP(110) - Applications of the Auger-Parameter Concept T. Chassé, R. Franke, C. Urban, R. Franzheld, P. Streubel, A. Meisel J. Electron Spectrosc. Relat. Phenom. 62 (1993) 287-308.

[22]

Investigation of Schottky Barrier Formation for Transition Metal Overlayers on InP and GaP(110) surfaces D.A. Evans, T.P. Chen, T. Chassé, K. Horn, M. von der Emde, D.R.T. Zahn Surf. Sci. 269/270 (1992) 979-987.

[21]

The interaction of Platinum with GaP(110): Band bending and surface photovoltage effects D.A. Evans, T.-P. Chen, T. Chassé, K. Horn Appl. Surf. Sci. 56-58 (1992) 233-241.

[20]

The Relaxation of Photoelectron and Auger Energies in Solid Phosphorus Compounds T. Chassé, R. Franke, P. Streubel, A. Meisel Physica Scripta T 41 (1992) 281-287.

[19]

Interface Reaction of Pt on p-WSe₂(0001) surfaces A. Klein, C. Pettenkofer, W. Jägermann, T. Chassé, K. Horn, M.Ch. Lux-Steiner, E. Bucher Surf. Sci. 264 (1992) L193-L199.

[18]

Interface Chemistry and Band Bending Induced by Pt Deposition onto GaP(110) T. Chassé, W. Theis, T.-P. Chen, A. Evans, K. Horn, C.Pettenkofer, W. Jägermann Surf. Sci. 251/252 (1991) 472-477.

[17]

Chemical State Information from Photoelectron and Auger Electron Lines - The Investigation of Potential and Relaxation Effects of Solid Silicon and Phosphorus Compounds P. Streubel, R. Franke, T. Chassé, R. Fellenberg, R. Szargan J. Electron Spectrosc. Relat. Phen. 57 (1991) 1-13.

[16]

Auger Parameters and Relaxation Energies of Phosphorus in Solid Compounds R. Franke, T. Chassé, P. Streubel, A. Meisel J. Electron Spectrosc. Relat. Phen. 56 (1991) 381-388.

[15]

Chemical Shifts of Auger Electron and Photoelectron Binding Energies of Phosphorus in Solid Compounds R. Franke, T. Chassé, B. Al-Araj, P. Streubel, A. Meisel phys. stat. sol. (b) 160 (1990) 143-151.

[14]

Indium interaction with GaP(110): Example of an unreactive interface T. Chassé, M. Alonso, R. Cimino, K. Horn, W. Braun Vacuum 41 (1990) 835-838.

[13]

Temperature-dependent interface formation study of aluminium on GaP(110) M. Alonso, R. Cimino, K. Horn, T. Chassé, W. Braun Vacuum 41 (1990) 1025-1028.

[12]

Schottky barrier heights and interface chemistry in Ag, In and Al overlayers on GaP(110) M. Alonso, R. Cimino, C. Maierhofer, T. Chassé, W. Braun, K. Horn J. Vacuum Sci. Technol. B 8 (1990) 955-963.

[11]

Elektronenspektroskopische Untersuchungen an Ti/InP- Grenzflächen T. Chassé, S. Stein, P. Streubel Physik der Halbleiteroberfläche 20 (1989) 15-18.

[10]

Chemical Reactions and Temperature-Dependent Interface Formation of Ti/InP(110) T. Chassé, W.G. Wilke, K. Horn Surf. Interface Anal. 14 (1989) 315-324.

[9]

Channeling and Backscattering of Low Energy Ions M. Kato, M. Katayama, T. Chassé, M. Aono Nuclear Instruments and Methods in Physics Research B 39 (1989) 30-34.

[8]

Recent Developments in Low-Energy Ion Scattering Spectroscopy (ISS for Structural Analysis) M. Aono, M. Katayama, E. Nomura, T. Chassé, M. Kato
Nuclear Instruments and Methods in Physics Research B 37/38 (1989) 264-269.

[7]

Sputter Depth Profiling of GaAlAs Double Heterostructures Using Auger Electron Spectroscopy T. Chassé, W. Heichler, J. Langhammer, W. Zwanzig
Cryst. Res. Technol. 22 11 (1987) 1425-1429.

[6]

Angular-Resolved X-Ray Photoelectron Spectra and Electronic Structure of SnS₂ U. Berg, T. Chassé phys. stat. sol. (b) 135 (1986) 633-637.

[5]

Photoelectron Diffraction and Band Structure Effects in ARXPS from the Valence Bands of GeS T. Chassé, U. Berg, O. Brümmer phys. stat. sol. (b) 132 (1985) 141-144.

[4]

X-Ray Photoelectron Valence Band Spectra from Semiconductors Bi₂Te₃ and Sb₂Te₃ T. Chassé, U. Berg Cryst. Res. Technol. 20 11 (1984) 1475-1479.

[3]

Angular-Resolved X-Ray Photoelectron Spectra of Valence and Core Levels from GaS T. Chassé, U. Berg, O. Brümmer phys. stat. sol. (b) 125 (1984) 267-274.

[2]

Investigation of the XPS Valence Band Structure from Sn Chalcogenides U. Berg, T. Chassé, O. Brümmer phys. stat. sol. (b) 108 (1981) 507-510.

[1]

Orientierungsabhängige Röntgenemissions- und Photoelektronenspektren von Einkristallen O. Brümmer, G. Dräger, U. Berg, W. Czolbe, T. Chassé Microchim. Acta Suppl.9 (1981) 205-220.