Narrow band gap colloidal quantum dots (QDs) offer exceptional promises for low-cost infrared active applications combining many advantages such as tunable absorption and fluorescence emission spectra, high molar extinction coefficients, high photoluminescence (PL) quantum yield, high stability, cost-efficient and scalable synthesis, and solution processability. One of the advantages of using Infrared (IR) radiation stems from reduced Rayleigh scattering of light in the air at longer wavelengths, induced for example by dust or fog. By consequence, short wavelength infrared (SWIR) cameras can “see” through haze better than visible cameras. Also, the use of near-infrared (NIR) light enables much larger penetration depths in biological tissues to perform deep-tissue imaging. Other useful applications of colloidal IR QDs have been explored in photovoltaics, infrared light-emitting diodes (LEDs), telecommunications, solar concentrators, thermoelectric devices, and optical sensing.

 Most of the reported NIR/SWIR active QDs are based on materials containing toxic heavy metals, such as PbS and HgTe QDs. III- V semiconductors containing one group-13 and one group-15 element of the periodic table are highly promising Pb- and Hg-free alternative materials. My research focuses on the development of syntheses and surface engineering of NIR/SWIR active III-V semiconductor QDs such as InAs and InSb QDs to enhance their optical properties. Also, I study the optical, structural, and electrical properties of NIR/SWIR active III-V semiconductor QDs to understand their carrier behavior for NIR/SWIR photodetector.