06.08.2024

DFG: Priority Programme “Nitrides4Future – Novel Materials and Device Concepts” (SPP 2477)

Deadline: 04.12.2024

In March 2024, the Senate of the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) established the Priority Programme “Nitrides4Future – Novel Materials and Device Concepts” (SPP 2477). The programme is designed to run for six years. The present call invites proposals for the first three-year funding period.

Semiconductors are the backbone of modern microelectronics – a key technology for innovation. Gallium nitride technology is increasingly developing into the second pillar of microelectronics, besides silicon CMOS technology.

The high potential of nitride semiconductors stems from the extraordinarily broad spectrum of fundamental material properties. Recent discoveries such as the enhanced piezoelectricity and ferroelectricity or impurity-free doping of AlN-based compounds suggest that much of the potential of nitrides for semiconductor technology is yet to be explored. At the same time, the comparatively mature AlInGaN and GaN/AlN technology provides a technological platform that greatly enhances the application prospects of novel materials and novel concepts in devices.

Objectives and Scope
This Priority Programme focuses on fundamental but application-oriented research on emerging nitride semiconductors alongside device architectures enabled by them. Novel nitride materials investigated in this programme should introduce functionalities beyond those of conventional III-N semiconductors, which in turn should enable novel or dramatically improved device functionalities. Novel nitrides investigated in this programme are required to be promising for integration with AlInGaN and GaN/AlN as the fundamental technology platform.

The enhancement of piezoelectric, ferroelectric and optical coefficients beyond those of AlN plays a central role, for which AlMeN compounds with Me = Sc, Cr, Y, Zr, Mo, La, Hf or Yb are promising candidates. For improving the optical, thermal or electrical properties of functional elements in nitride semiconductor devices, graded alloys or porosity bear a large potential.

Research on conventional devices based on GaN/InGaN/AlGaN/AlN without the integration of any novel functionalities, as well as research exclusively focused on simulation methodology, are not with-in the scope of this programme. Research on 2D materials is not intended.

While the state of the art requires substantial materials development accompanied by advanced characterisation throughout the first three-year funding period, research on device concepts specific to novel or enhanced functionalities is also intended from the start. Projects are expected to contribute to the outlined objectives, while linking areas such as theory and experiment or materials and devices.

A workshop for all potential applicants will be held on 24–25 September 2024 in order to discuss details of the research concept of the programme and the focal topics and to facilitate the formation of joint projects for this Priority Programme. The meeting will be held in Erlangen. Researchers who are interested in this preparatory meeting should contact the coordinator of the Priority Programme for further information. Registration deadline for the workshop is 30 August 2024.

Proposals must be written in English and submitted to the DFG by 4 December 2024.

For more information, please visit: https://www.dfg.de/de/aktuelles/neuigkeiten-themen/info-wissenschaft/2024/ifw-24-70