Using IBID, structures can be written directly onto the surface of substrates in an extremely flexible manner. For this purpose, a micro needle is approached to approx. 100 µm to the surface and a precursor gas is let in. The gas molecules are decomposed in interaction with the ion beam. The volatile organic components are transported out of the sample chamber via the vacuum system. The non-volatile metallic components, on the other hand, settle on the surface and form conductive layers.
The difference to EBID is essentially the type of primary beam, but the actual interaction with the precursor gas takes place with the low-energy secondary and backscattered electrons. However, IBID offers the advantage of a significantly higher deposition rate and cleaner metal layers.
FEI Strata DB235
Our dual beam system has a gas injection system with platinum precursor. This mainly protects the cutting edges of e. g. cross sections and lamellas, as these would otherwise be made unrecognizable by the re-deposition of the sputtered material. It is also possible to directly create 3D structures such as dots, pillars or etch masks.
Unfortunately, our system is out of order, but we will happily give advice on alternative systems from our colleagues at other institutes.
Zeiss ORION Nanofab
In our Orion Nanofab with neon option, the gas injection system with three precursors can also be used to selectively deposit plantinum, but also tungsten and silicon oxide containing layers. IBID in the helium ion microscope allows for significantly finer structures than deposition in Ga systems (FIB) with a significantly lower proximity influence at approximately the same deposition rates.
